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MOSFETs BUY25CS45B-01(ES)
Infineon
BUY25CS45B-01(ES)
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Wafer |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 25 |
| Typical Fall Time (ns) | 75(Max) |
| Typical Rise Time (ns) | 95(Max) |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 208000 |
| Typical Gate Charge @ 10V (nC) | 100(Max) |
| Typical Gate Charge @ Vgs (nC) | 100(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 50(Max) |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 80(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 45 |
| Typical Input Capacitance @ Vds (pF) | 6500(Max)@100V |
| Maximum Drain Source Resistance (MOhm) | 50@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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