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NTD18N06LT4G
NTD18N06LT4G
MOSFETs NTD18N06LT4G
onsemi
NTD18N06LT4G
--
Diodes, Transistors and Thyristors
MOSFETs
NTD18N06LT4G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)38
Typical Rise Time (ns)79
Number of Elements per Chip1
Maximum Power Dissipation (mW)55000
Typical Gate Charge @ Vgs (nC)11@5V
Maximum Gate Source Voltage (V)±15
Typical Output Capacitance (pF)166
Typical Turn-On Delay Time (ns)9.9
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4.1
Typical Turn-Off Delay Time (ns)19
Maximum Diode Forward Voltage (V)1.15
Typical Diode Forward Voltage (V)0.94
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.8
Typical Reverse Recovery Time (ns)41
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)482@25V
Typical Reverse Recovery Charge (nC)57
Maximum Drain Source Resistance (mOhm)65@5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)15
Maximum Pulsed Drain Current @ TC=25°C (A)54
Maximum Power Dissipation on PCB @ TC=25°C (W)2.1
Typical Reverse Transfer Capacitance @ Vds (pF)56@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)100
Description
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) DPAK T/R
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