Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Depletion |
Channel Type | N|P |
Configuration | Dual |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 12@N Channel|22@P Channel |
Typical Rise Time (ns) | 18.5@N Channel|10.5@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 900 |
Typical Gate Charge @ 10V (nC) | 5.2@N Channel|5.5@P Channel |
Typical Gate Charge @ Vgs (nC) | 5.2@10V@N Channel|5.5@10V@P Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 7.8@N Channel|8.5@P Channel |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 22@N Channel|29@P Channel |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 2.5@N Channel|1.8@P Channel |
Typical Input Capacitance @ Vds (pF) | 187@10V@N Channel|226@10V@P Channel |
Maximum Drain Source Resistance (MOhm) | 105@10V@N Channel|235@10V@P Channel |
Maximum Gate Source Leakage Current (nA) | 10000 |
Description |