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CPH6615-TL-E
CPH6615-TL-E
MOSFETs CPH6615-TL-E
onsemi
CPH6615-TL-E
--
Diodes, Transistors and Thyristors
MOSFETs
CPH6615-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeDepletion
Channel TypeN|P
ConfigurationDual
Product CategoryPower MOSFET
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12@N Channel|22@P Channel
Typical Rise Time (ns)18.5@N Channel|10.5@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)900
Typical Gate Charge @ 10V (nC)5.2@N Channel|5.5@P Channel
Typical Gate Charge @ Vgs (nC)5.2@10V@N Channel|5.5@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.8@N Channel|8.5@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22@N Channel|29@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5@N Channel|1.8@P Channel
Typical Input Capacitance @ Vds (pF)187@10V@N Channel|226@10V@P Channel
Maximum Drain Source Resistance (MOhm)105@10V@N Channel|235@10V@P Channel
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH Si 30V 2.5A/1.8A T/R
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