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FDD3860
FDD3860
MOSFETs FDD3860
onsemi
FDD3860
--
Diodes, Transistors and Thyristors
MOSFETs
FDD3860.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyTMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)3750
Typical Gate Charge @ Vgs (nC)22
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.2
Typical Input Capacitance @ Vds (pF)1310@50V
Maximum Drain Source Resistance (mOhm)36@10V
Description
Trans MOSFET N-CH Si 100V 6.2A 3-Pin(2+Tab) DPAK T/R
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