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CSD13383F4T
CSD13383F4T
MOSFETs CSD13383F4T
Texas Instruments
CSD13383F4T
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.04(Max)
Package Height0.35(Max)
Package Length0.64(Max)
Product CategorySmall Signal
Supplier PackagePicoStar
Maximum IDSS (uA)1
Process TechnologyFemtoFET
Typical Fall Time (ns)290
Typical Rise Time (ns)122
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)2@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)46
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)250
Typical Gate to Drain Charge (nC)0.6
Maximum Gate Threshold Voltage (V)1.25
Typical Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.9
Typical Input Capacitance @ Vds (pF)224@6V
Maximum Drain Source Resistance (mOhm)44@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 12V 2.9A 3-Pin PicoStar T/R
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