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MOSFETs CSD16322Q5
Texas Instruments
CSD16322Q5
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 6 |
| Package Height | 1 |
| Package Length | 5 |
| Product Category | Power MOSFET |
| Supplier Package | VSON-CLIP EP |
| Process Technology | NexFET |
| Standard Package Name | SON |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 3.7 |
| Typical Rise Time (ns) | 10.7 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3100 |
| Typical Gate Charge @ Vgs (nC) | 6.8@4.5V |
| Maximum Gate Source Voltage (V) | 10 |
| Typical Output Capacitance (pF) | 740 |
| Typical Turn-On Delay Time (ns) | 6.1 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 12.3 |
| Typical Gate to Drain Charge (nC) | 1.3 |
| Maximum Gate Threshold Voltage (V) | 1.4 |
| Typical Gate Threshold Voltage (V) | 1.1 |
| Typical Gate to Source Charge (nC) | 2.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 21 |
| Typical Input Capacitance @ Vds (pF) | 1050@12.5V |
| Typical Reverse Recovery Charge (nC) | 19 |
| Maximum Drain Source Resistance (mOhm) | 5@8V |
| Description |
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