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CSD19505KCS
CSD19505KCS
MOSFETs CSD19505KCS
Texas Instruments
CSD19505KCS
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.25(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyNexFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)76
Typical Gate Charge @ Vgs (nC)76@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)31
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)62
Typical Gate to Drain Charge (nC)11
Maximum Gate Threshold Voltage (V)3.2
Typical Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)150
Typical Input Capacitance @ Vds (pF)6090@40V
Maximum Drain Source Resistance (mOhm)3.1@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 80V 150A 3-Pin(3+Tab) TO-220 Tube
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