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CSD19534KCS
CSD19534KCS
MOSFETs CSD19534KCS
Texas Instruments
CSD19534KCS
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.25(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyNexFET
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)1
Typical Rise Time (ns)2
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)2.2
Maximum Power Dissipation (mW)118000
Typical Gate Charge @ 10V (nC)17.1
Typical Gate Charge @ Vgs (nC)17.1@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)257
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)4.5
Typical Turn-Off Delay Time (ns)9
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)3.2
Maximum Gate Threshold Voltage (V)3.4
Minimum Gate Threshold Voltage (V)2.4
Typical Gate Threshold Voltage (V)2.8
Typical Gate to Source Charge (nC)5.1
Typical Reverse Recovery Time (ns)72
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1290@50V
Typical Reverse Recovery Charge (nC)195
Maximum Drain Source Resistance (mOhm)16.5@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)138
Typical Reverse Transfer Capacitance @ Vds (pF)5.7@50V
Description
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
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