Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.7(Max) |
Package Height | 9.25(Max) |
Package Length | 10.36(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220 |
Maximum IDSS (uA) | 1 |
Process Technology | NexFET |
Standard Package Name | TO-220 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 1 |
Typical Rise Time (ns) | 2 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 2.2 |
Maximum Power Dissipation (mW) | 118000 |
Typical Gate Charge @ 10V (nC) | 17.1 |
Typical Gate Charge @ Vgs (nC) | 17.1@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 257 |
Typical Turn-On Delay Time (ns) | 6 |
Maximum Drain Source Voltage (V) | 100 |
Typical Gate Plateau Voltage (V) | 4.5 |
Typical Turn-Off Delay Time (ns) | 9 |
Maximum Diode Forward Voltage (V) | 1.1 |
Typical Diode Forward Voltage (V) | 0.9 |
Typical Gate to Drain Charge (nC) | 3.2 |
Maximum Gate Threshold Voltage (V) | 3.4 |
Minimum Gate Threshold Voltage (V) | 2.4 |
Typical Gate Threshold Voltage (V) | 2.8 |
Typical Gate to Source Charge (nC) | 5.1 |
Typical Reverse Recovery Time (ns) | 72 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 100 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 1290@50V |
Typical Reverse Recovery Charge (nC) | 195 |
Maximum Drain Source Resistance (mOhm) | 16.5@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 138 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 5.7@50V |
Description | |