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MOSFETs AUIRF8739L2TR
Infineon
AUIRF8739L2TR
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 9 |
| Automotive | Yes |
| PCB changed | 9 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain Octal Source |
| Package Width | 7.1(Max) |
| Package Height | 0.74(Max) |
| Package Length | 9.15(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Direct-FET |
| Maximum IDSS (uA) | 1 |
| Process Technology | HEXFET |
| Typical Fall Time (ns) | 95 |
| Typical Rise Time (ns) | 117 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3800 |
| Typical Gate Charge @ 10V (nC) | 375 |
| Typical Gate Charge @ Vgs (nC) | 375@10V |
| Maximum Gate Source Voltage (V) | 40 |
| Typical Output Capacitance (pF) | 2640 |
| Typical Turn-On Delay Time (ns) | 34 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 120 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Gate Threshold Voltage (V) | 3.9 |
| Minimum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 57 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 17890@25V |
| Maximum Drain Source Resistance (MOhm) | 0.6@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 40 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1150 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Description |
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