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MOSFETs CSD23382F4T
Texas Instruments
CSD23382F4T
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 1.04(Max) |
| Package Height | 0.35(Max) |
| Package Length | 0.64(Max) |
| Product Category | Small Signal |
| Supplier Package | PicoStar |
| Maximum IDSS (uA) | 1 |
| Process Technology | FemtoFET |
| Typical Fall Time (ns) | 41 |
| Typical Rise Time (ns) | 25 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 1.04@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 28 |
| Maximum Drain Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 66 |
| Typical Gate to Drain Charge (nC) | 0.15 |
| Maximum Gate Threshold Voltage (V) | 1.1 |
| Typical Gate Threshold Voltage (V) | 0.8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.5 |
| Typical Input Capacitance @ Vds (pF) | 180@6V |
| Maximum Drain Source Resistance (MOhm) | 76@4.5V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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