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CSD25304W1015T
CSD25304W1015T
MOSFETs CSD25304W1015T
Texas Instruments
CSD25304W1015T
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeBall
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain Triple Source
Package Width1(Max)
Package Height0.28(Max)
Package Length1.49(Max)
Product CategoryPower MOSFET
Supplier PackageDSBGA
Maximum IDSS (uA)1
Process TechnologyNexFET
Standard Package NameBGA
Typical Fall Time (ns)10
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)750
Typical Gate Charge @ Vgs (nC)3.3@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)24
Typical Gate to Drain Charge (nC)0.5
Maximum Gate Threshold Voltage (V)1.15
Typical Gate Threshold Voltage (V)0.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)458@10V
Maximum Drain Source Resistance (mOhm)32.5@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R
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