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MOSFETs DMC1028UFDB-7
Diodes Incorporated
DMC1028UFDB-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 2 |
| Package Height | 0.56 |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | UDFN EP |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 3.7@N Channel|12.7@P Channel |
| Typical Rise Time (ns) | 9.4@N Channel|3.6@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1890 |
| Typical Gate Charge @ Vgs (nC) | 7.9@3.3V|10.5@4.5V|18.5@8V@N Channel|5.2@3.3V|6.7@4.5V|11.5@8V@P Channel |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 203@N Channel|87@P Channel |
| Typical Turn-On Delay Time (ns) | 4.6@N Channel|3.5@P Channel |
| Maximum Drain Source Voltage (V) | 12@N Channel|20@P Channel |
| Typical Gate Plateau Voltage (V) | 1.7 |
| Typical Turn-Off Delay Time (ns) | 15.7@N Channel|20.8@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.7 |
| Typical Gate to Drain Charge (nC) | 2.9@N Channel|2@P Channel |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate to Source Charge (nC) | 1.2@N Channel|1@P Channel |
| Typical Reverse Recovery Time (ns) | 12@N Channel|13.1@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6@N Channel|3.4@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 787@6V@N Channel|576@10V@P Channel |
| Typical Reverse Recovery Charge (nC) | 1.8@N Channel|3.9@P Channel |
| Maximum Drain Source Resistance (mOhm) | 25@4.5V@N Channel|80@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40@N Channel|20@P Channel |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.89 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 177@6V@N Channel|71@10V@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 6@N Channel|3.4@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 92 |
| Description |
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