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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DMC1030UFDB-13
DMC1030UFDB-13
MOSFETs DMC1030UFDB-13
Diodes Incorporated
DMC1030UFDB-13
--
Diodes, Transistors and Thyristors
MOSFETs
DMC1030UFDB-13.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width2
Package Height0.56
Package Length2
Product CategoryPower MOSFET
Supplier PackageUDFN EP
Maximum IDSS (uA)1
Typical Fall Time (ns)0.9@N Channel|25.4@P Channel
Typical Rise Time (ns)7.4@N Channel|12.8@P Channel
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)1890
Typical Gate Charge @ Vgs (nC)12.2@4.5V|23.1@8V@N Channel|13@4.5V|20.8@8V@P Channel
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)4.4@N Channel|5.6@P Channel
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)18.8@N Channel|30.7@P Channel
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.1@N Channel|3.9@P Channel
Typical Input Capacitance @ Vds (pF)1003@6V@N Channel|1028@6V@P Channel
Maximum Drain Source Resistance (mOhm)34@4.5V@N Channel|59@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH 12V 5.1A/3.9A 6-Pin UDFN EP T/R
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