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FQA7N80C-F109
FQA7N80C-F109
MOSFETs FQA7N80C-F109
onsemi
FQA7N80C-F109
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-3P
Typical Fall Time (ns)60
Typical Rise Time (ns)100
Number of Elements per Chip1
Maximum Power Dissipation (mW)198000
Typical Gate Charge @ 10V (nC)27
Typical Gate Charge @ Vgs (nC)27@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)50
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)1290@25V
Maximum Drain Source Resistance (mOhm)1900@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-3P Tube
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