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MOSFETs DMG6601LVT-7-01
Diodes Incorporated
DMG6601LVT-7-01
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 0.9(Max) |
| Package Length | 2.9 |
| Product Category | Power MOSFET |
| Supplier Package | TSOT-26 |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 15.6@Q 1|2.2@Q 2 |
| Typical Rise Time (ns) | 7.4@Q 1|4.6@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1300 |
| Typical Gate Charge @ 10V (nC) | 5.4@Q 1|6.5@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 5.4@4.5V|12.3@10V@Q 1|6.5@4.5V|13.8@10V@Q 2 |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 1.6@Q 1|1.7@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 31.2@Q 1|18.3@Q 2 |
| Maximum Gate Threshold Voltage (V) | 1.5@Q 1|1.2@Q 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.8@N Channel|2.5@P Channel |
| Typical Input Capacitance @ Vds (pF) | 422@15V@Q 1|541@15V@Q 2 |
| Maximum Drain Source Resistance (mOhm) | 55@10V@N Channel|110@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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