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DMN2300UFB4
DMN2300UFB4
MOSFETs DMN2300UFB4
Diodes Incorporated
DMN2300UFB4
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Diodes, Transistors and Thyristors
MOSFETs
DMN2300UFB4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1
Package Height0.35(Max)
Package Length0.6
Product CategorySmall Signal
Supplier PackageX2-DFN
Maximum IDSS (uA)1
Standard Package NameDFN
Typical Fall Time (ns)13
Typical Rise Time (ns)2.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)1.6@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)3.5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)38
Maximum Gate Threshold Voltage (V)0.95
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.3
Typical Input Capacitance @ Vds (pF)67.6@20V
Maximum Drain Source Resistance (mOhm)175@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R
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