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DMN3190LDW-7
DMN3190LDW-7
MOSFETs DMN3190LDW-7
Diodes Incorporated
DMN3190LDW-7
--
Diodes, Transistors and Thyristors
MOSFETs
DMN3190LDW-7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.3
Package Height0.95
Package Length2.15
Product CategoryPower MOSFET
Supplier PackageSOT-363
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)15.6
Typical Rise Time (ns)8.9
Number of Elements per Chip2
Maximum Power Dissipation (mW)400
Typical Gate Charge @ 10V (nC)2
Typical Gate Charge @ Vgs (nC)2@10V|0.9@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)17
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.9
Typical Turn-Off Delay Time (ns)30.3
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)0.3
Maximum Gate Threshold Voltage (V)2.8
Minimum Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)0.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)87@20V
Maximum Drain Source Resistance (MOhm)190@10V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)2
Maximum Power Dissipation on PCB @ TC=25°C (W)0.4
Typical Reverse Transfer Capacitance @ Vds (pF)12@20V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)320
Description
Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R
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