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STL13NM60N
STL13NM60N
MOSFETs STL13NM60N
STMicroelectronics
STL13NM60N
--
Diodes, Transistors and Thyristors
MOSFETs
STL13NM60N.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeNo Lead
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width8
Package Height0.88
Package Length8
Supplier PackagePower Flat
Maximum IDSS (uA)1
Process TechnologyMDmesh II
Typical Fall Time (ns)10
Typical Rise Time (ns)8
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)90000
Typical Gate Charge @ 10V (nC)27
Typical Gate Charge @ Vgs (nC)27@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)3
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)30
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)790@50V
Maximum Drain Source Resistance (MOhm)385@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 10A 5-Pin Power Flat T/R
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