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MOSFETs DMN31D5L-13
Diodes Incorporated
DMN31D5L-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Small Signal |
| Typical Fall Time (ns) | 13.8 |
| Typical Rise Time (ns) | 3.3 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 520 |
| Typical Gate Charge @ 10V (nC) | 1.2 |
| Typical Gate Charge @ Vgs (nC) | 0.5@4.5V|1.2@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.5 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 16.8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.5 |
| Typical Input Capacitance @ Vds (pF) | 50@15V |
| Maximum Drain Source Resistance (mOhm) | 1500@4V |
| Description |
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