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DMN32D4SDW-7
DMN32D4SDW-7
MOSFETs DMN32D4SDW-7
Diodes Incorporated
DMN32D4SDW-7
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Diodes, Transistors and Thyristors
MOSFETs
DMN32D4SDW-7.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.3
Package Height0.95
Package Length2.15
Product CategoryPower MOSFET
Supplier PackageSOT-363
Maximum IDSS (uA)1
Standard Package NameSOT-26
Typical Fall Time (ns)22.8
Typical Rise Time (ns)3.2
Number of Elements per Chip2
Maximum Power Dissipation (mW)350
Typical Gate Charge @ 10V (nC)1.3
Typical Gate Charge @ Vgs (nC)0.6@4.5V|1.3@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)2.8
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)26.3
Maximum Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.65
Typical Input Capacitance @ Vds (pF)50@15V
Maximum Drain Source Resistance (MOhm)400@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 30V 0.65A 6-Pin SOT-363 T/R
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