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DMN62D1LFB-7B
DMN62D1LFB-7B
MOSFETs DMN62D1LFB-7B
Diodes Incorporated
DMN62D1LFB-7B
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1
Package Height0.47
Package Length0.6
Product CategoryPower MOSFET
Supplier PackageX1-DFN
Maximum IDSS (uA)1
Standard Package NameDFN
Typical Fall Time (ns)16.3
Typical Rise Time (ns)3.4
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)250
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)0.45@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)4.4
Typical Turn-On Delay Time (ns)3.4
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)1.8
Typical Turn-Off Delay Time (ns)26.4
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)0.08
Maximum Gate Threshold Voltage (V)1
Minimum Gate Threshold Voltage (V)0.6
Typical Gate to Source Charge (nC)0.08
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.407
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)32@25V
Maximum Drain Source Resistance (mOhm)2000@4V
Maximum Gate Source Leakage Current (nA)2000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1
Maximum Power Dissipation on PCB @ TC=25°C (W)0.5
Typical Reverse Transfer Capacitance @ Vds (pF)2.9@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.407
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)251
Description
Trans MOSFET N-CH 60V 0.407A 3-Pin X1-DFN T/R
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