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MOSFETs DMN63D8LDWQ-13
Diodes Incorporated
DMN63D8LDWQ-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | Yes |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Product Category | Small Signal |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 6.3 |
| Typical Rise Time (ns) | 3.2 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 400 |
| Typical Gate Charge @ 10V (nC) | 0.87 |
| Typical Gate Charge @ Vgs (nC) | 0.87@10V|0.43@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.3 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 12 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.26 |
| Typical Input Capacitance @ Vds (pF) | 22@25V |
| Maximum Drain Source Resistance (mOhm) | 2800@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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