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DMN65D8LQ-13
DMN65D8LQ-13
MOSFETs DMN65D8LQ-13
Diodes Incorporated
DMN65D8LQ-13
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Diodes, Transistors and Thyristors
MOSFETs
DMN65D8LQ-13.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.98
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)7.3
Typical Rise Time (ns)2.8
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)540
Typical Gate Charge @ 10V (nC)0.87
Typical Gate Charge @ Vgs (nC)0.87@10V|0.43@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)2.7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)12.6
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.31
Typical Input Capacitance @ Vds (pF)22@25V
Maximum Drain Source Resistance (mOhm)3000@10V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin SOT-23 T/R
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