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MOSFETs DMT6017LFDF-7
Diodes Incorporated
DMT6017LFDF-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 3.3 |
| Typical Rise Time (ns) | 5.9 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1760 |
| Typical Gate Charge @ 10V (nC) | 15.3 |
| Typical Gate Charge @ Vgs (nC) | 7.5@4.5V|15.3@10V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 4 |
| Maximum Drain Source Voltage (V) | 65 |
| Typical Turn-Off Delay Time (ns) | 11.7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8.1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 891@30V |
| Maximum Drain Source Resistance (mOhm) | 18@10V |
| Description |
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