Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Bag |
Pin Count | 3 |
Automotive | No |
Lead Shape | Formed |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Depletion |
Channel Type | N |
Configuration | Single |
Package Width | 4.19(Max) |
Package Height | 5.33(Max) |
Package Length | 5.21(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-92 |
Maximum IDSS (uA) | 200000(Min) |
Process Technology | VDMOS |
Standard Package Name | TO |
Typical Fall Time (ns) | 40(Max) |
Typical Rise Time (ns) | 30(Max) |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 740 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 40(Max) |
Typical Turn-On Delay Time (ns) | 20(Max) |
Maximum Drain Source Voltage (V) | 450 |
Typical Gate Plateau Voltage (V) | 1.1 |
Typical Turn-Off Delay Time (ns) | 30(Max) |
Maximum Diode Forward Voltage (V) | 1.8 |
Typical Reverse Recovery Time (ns) | 800 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 0.136 |
Typical Input Capacitance @ Vds (pF) | 360(Max)@25V |
Maximum Drain Source Resistance (MOhm) | 20000@0V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 1.6 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 15(Max)@25V |
Description |