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DN3545N3-G
DN3545N3-G
MOSFETs DN3545N3-G
Microchip Technology
DN3545N3-G
--
Diodes, Transistors and Thyristors
MOSFETs
DN3545N3-G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeFormed
PCB changed3
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.21(Max)
Product CategoryPower MOSFET
Supplier PackageTO-92
Maximum IDSS (uA)200000(Min)
Process TechnologyVDMOS
Standard Package NameTO
Typical Fall Time (ns)40(Max)
Typical Rise Time (ns)30(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)740
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)40(Max)
Typical Turn-On Delay Time (ns)20(Max)
Maximum Drain Source Voltage (V)450
Typical Gate Plateau Voltage (V)1.1
Typical Turn-Off Delay Time (ns)30(Max)
Maximum Diode Forward Voltage (V)1.8
Typical Reverse Recovery Time (ns)800
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.136
Typical Input Capacitance @ Vds (pF)360(Max)@25V
Maximum Drain Source Resistance (MOhm)20000@0V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1.6
Typical Reverse Transfer Capacitance @ Vds (pF)15(Max)@25V
Description
Trans MOSFET N-CH Si 450V 0.136A 3-Pin TO-92 Bag
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