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MOSFETs EFC3J018NUZTDG
onsemi
EFC3J018NUZTDG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Ball |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Dual Common Drain Dual Source |
| Package Width | 1.77 |
| Package Height | 0.15(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | WLCSP |
| Typical Fall Time (ns) | 2800 |
| Typical Rise Time (ns) | 890 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ Vgs (nC) | 75@4.5V |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Turn-On Delay Time (ns) | 280 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 4100 |
| Maximum Gate Threshold Voltage (V) | 1.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 23 |
| Maximum Drain Source Resistance (mOhm) | 4.7@4.5V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Description |
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