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MOSFETs EFC4C002NLTDG
onsemi
EFC4C002NLTDG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Ball |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Package Width | 2.55(Max) |
| Package Height | 0.23(Max) |
| Package Length | 6.05(Max) |
| Product Category | Power MOSFET |
| Supplier Package | WLCSP |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 105 |
| Typical Rise Time (ns) | 750 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2600 |
| Typical Gate Charge @ Vgs (nC) | 45@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 40 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 280 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Drain Source Resistance (mOhm) | 2.6@10V |
| Maximum Gate Source Leakage Current (nA) | 200 |
| Description |
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