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MOSFETs EFC4C012NLTDG
onsemi
EFC4C012NLTDG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Dual Common Drain |
| Package Width | 1.9 |
| Package Height | 0.21 |
| Package Length | 3.5 |
| Product Category | Power MOSFET |
| Supplier Package | WLCSP |
| Typical Fall Time (ns) | 5700 |
| Typical Rise Time (ns) | 2000 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ Vgs (nC) | 18@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 2700 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 26000 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 19 |
| Maximum Drain Source Resistance (mOhm) | 6.5@10V |
| Description |
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