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FCA47N60
FCA47N60
MOSFETs FCA47N60
onsemi
FCA47N60
--
Diodes, Transistors and Thyristors
MOSFETs
FCA47N60.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Maximum IDSS (uA)1
Process TechnologySuperFET
Standard Package NameTO-3P
Typical Fall Time (ns)75
Typical Rise Time (ns)210
Number of Elements per Chip1
Maximum Power Dissipation (mW)417000
Typical Gate Charge @ 10V (nC)210
Typical Gate Charge @ Vgs (nC)210@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)3200
Typical Turn-On Delay Time (ns)185
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)6.2
Typical Turn-Off Delay Time (ns)520
Maximum Diode Forward Voltage (V)1.4
Typical Gate to Drain Charge (nC)110
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)38
Typical Reverse Recovery Time (ns)590
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)47
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)5900@25V
Typical Reverse Recovery Charge (nC)25000
Maximum Drain Source Resistance (mOhm)70@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)141
Typical Reverse Transfer Capacitance @ Vds (pF)250@25V
Description
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube
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