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FCD260N65S3
FCD260N65S3
MOSFETs FCD260N65S3
onsemi
FCD260N65S3
--
Diodes, Transistors and Thyristors
MOSFETs
FCD260N65S3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologySuperFET III
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12
Typical Rise Time (ns)18
Number of Elements per Chip1
Maximum Power Dissipation (mW)90000
Typical Gate Charge @ 10V (nC)24
Typical Gate Charge @ Vgs (nC)24@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)49
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)1010@400V
Maximum Drain Source Resistance (MOhm)260@10V
Description
Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) DPAK T/R
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