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FDA032N08
FDA032N08
MOSFETs FDA032N08
onsemi
FDA032N08
--
Diodes, Transistors and Thyristors
MOSFETs
FDA032N08.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameTO-3P
Typical Fall Time (ns)121
Typical Rise Time (ns)191
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)169
Typical Gate Charge @ Vgs (nC)169@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1360
Typical Turn-On Delay Time (ns)230
Maximum Drain Source Voltage (V)75
Typical Gate Plateau Voltage (V)5.4
Typical Turn-Off Delay Time (ns)335
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)47
Maximum Gate Threshold Voltage (V)4.5
Minimum Gate Threshold Voltage (V)2.5
Typical Gate Threshold Voltage (V)3.5
Typical Gate to Source Charge (nC)60
Typical Reverse Recovery Time (ns)53
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)235
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)11400@25V
Typical Reverse Recovery Charge (nC)77
Maximum Drain Source Resistance (mOhm)3.2@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)940
Typical Reverse Transfer Capacitance @ Vds (pF)595@25V
Description
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
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