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FW389-TL-2W
FW389-TL-2W
MOSFETs FW389-TL-2W
onsemi
FW389-TL-2W
--
Diodes, Transistors and Thyristors
MOSFETs
FW389-TL-2W.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Drain
Package Width3.9
Package Height1.38
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)1
Standard Package NameSOP
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)40@P Channel|26@N Channel
Typical Rise Time (ns)16@P Channel|5.4@N Channel
Number of Elements per Chip2
Maximum Gate Resistance (Ohm)50@P Channel|12@N Channel
Minimum Gate Resistance (Ohm)0
Maximum Power Dissipation (mW)2200
Typical Gate Charge @ 10V (nC)21@P Channel|10@N Channel
Typical Gate Charge @ Vgs (nC)21@10V@P Channel|10@10V@N Channel
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)77@P Channel|34@N Channel
Typical Turn-On Delay Time (ns)12@P Channel|9.3@N Channel
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)3@P Channel|2.9@N Channel
Typical Turn-Off Delay Time (ns)110@P Channel|42@N Channel
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.79@P Channel|0.78@N Channel
Typical Gate to Drain Charge (nC)4.4@P Channel|2.1@N Channel
Typical Gate to Source Charge (nC)2.8@P Channel|1.4@N Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1000@20V@P Channel|490@10V@N Channel
Maximum Drain Source Resistance (MOhm)300@10V@P Channel|225@10V@N Channel
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)20
Typical Reverse Transfer Capacitance @ Vds (pF)47@20V@P Channel|13@10V@N Channel
Description
Trans MOSFET N/P-CH 100V 2A 8-Pin SOIC T/R
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