HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 5(Max) |
Package Height | 18.9(Max) |
Package Length | 16.2(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-3P |
Maximum IDSS (uA) | 1 |
Process Technology | DMOS |
Standard Package Name | TO-3P |
Typical Fall Time (ns) | 105 |
Typical Rise Time (ns) | 375 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 280000 |
Typical Gate Charge @ 10V (nC) | 45.6 |
Typical Gate Charge @ Vgs (nC) | 45.6@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Output Capacitance (pF) | 355 |
Typical Turn-On Delay Time (ns) | 95 |
Maximum Drain Source Voltage (V) | 500 |
Typical Gate Plateau Voltage (V) | 7.9 |
Typical Turn-Off Delay Time (ns) | 100 |
Maximum Diode Forward Voltage (V) | 1.4 |
Typical Gate to Drain Charge (nC) | 21.6 |
Maximum Gate Threshold Voltage (V) | 5 |
Minimum Gate Threshold Voltage (V) | 3 |
Typical Gate to Source Charge (nC) | 14.8 |
Typical Reverse Recovery Time (ns) | 507 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 22 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 2400@25V |
Typical Reverse Recovery Charge (nC) | 7200 |
Maximum Drain Source Resistance (MOhm) | 230@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 30 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 88 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 27@25V |
Description | |