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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MOSFETs FDB045AN08A0-SN00237
onsemi
FDB045AN08A0-SN00237
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Diodes, Transistors and Thyristors
MOSFETs
FDB045AN08A0-SN00237.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)45
Typical Rise Time (ns)88
Number of Elements per Chip1
Maximum Power Dissipation (mW)310000
Typical Gate Charge @ 10V (nC)92
Typical Gate Charge @ Vgs (nC)92@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)40
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)6600@25V
Maximum Drain Source Resistance (mOhm)4.5@10V
Description
Trans MOSFET N-CH 75V 19A T/R
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