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FQP9N30
FQP9N30
MOSFETs FQP9N30
onsemi
FQP9N30
--
Diodes, Transistors and Thyristors
MOSFETs
FQP9N30.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Standard Package NameTO-220
Typical Fall Time (ns)48
Typical Rise Time (ns)120
Number of Elements per Chip1
Maximum Power Dissipation (mW)98000
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)300
Typical Turn-Off Delay Time (ns)27
Maximum Diode Forward Voltage (V)1.5
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)570@25V
Maximum Drain Source Resistance (MOhm)450@10V
Maximum Positive Gate Source Voltage (V)30
Description
Trans MOSFET N-CH 300V 9A 3-Pin(3+Tab) TO-220 Tube
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