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FDB050AN06A0
FDB050AN06A0
MOSFETs FDB050AN06A0
onsemi
FDB050AN06A0
--
Diodes, Transistors and Thyristors
MOSFETs
FDB050AN06A0.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)29
Typical Rise Time (ns)160
Number of Elements per Chip1
Maximum Power Dissipation (mW)245000
Typical Gate Charge @ 10V (nC)61
Typical Gate Charge @ Vgs (nC)61@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)750
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)5.9
Typical Turn-Off Delay Time (ns)28
Maximum Diode Forward Voltage (V)1.25
Typical Gate to Drain Charge (nC)15
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)24
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3900@25V
Maximum Drain Source Resistance (mOhm)5@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Typical Reverse Transfer Capacitance @ Vds (pF)270@25V
Description
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R
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