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FDMC86324
FDMC86324
MOSFETs FDMC86324
onsemi
FDMC86324
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC86324.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height1.05(Max)
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePower 33
Process TechnologyTMOS
Typical Fall Time (ns)4
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)13
Typical Gate Charge @ Vgs (nC)13@10V|8@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)725@50V
Maximum Drain Source Resistance (mOhm)23@10V
Description
Trans MOSFET N-CH Si 80V 7A 8-Pin Power 33 T/R
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