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FDB2670
FDB2670
MOSFETs FDB2670
onsemi
FDB2670
--
Diodes, Transistors and Thyristors
MOSFETs
FDB2670.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-263AB
Typical Fall Time (ns)23
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Power Dissipation (mW)93000
Typical Gate Charge @ 10V (nC)27
Typical Gate Charge @ Vgs (nC)27@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)26
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)1320@100V
Maximum Drain Source Resistance (MOhm)130@10V
Description
Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) TO-263AB Tube
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