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FDB8441
FDB8441
MOSFETs FDB8441
onsemi
FDB8441
--
Diodes, Transistors and Thyristors
MOSFETs
FDB8441.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyTMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)17.9
Typical Rise Time (ns)24
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)215
Typical Gate Charge @ Vgs (nC)215@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)23
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)75
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)28
Typical Input Capacitance @ Vds (pF)15000@25V
Maximum Drain Source Resistance (mOhm)2.5@10V
Description
Trans MOSFET N-CH Si 40V 28A 3-Pin(2+Tab) D2PAK T/R
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