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FDBL0110N60
FDBL0110N60
MOSFETs FDBL0110N60
onsemi
FDBL0110N60
--
Diodes, Transistors and Thyristors
MOSFETs
FDBL0110N60.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width10.48(Max)
Package Height2.4(Max)
Package Length9.9(Max)
Product CategoryPower MOSFET
Supplier PackageTO-LL
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)41
Typical Rise Time (ns)61
Number of Elements per Chip1
Maximum Power Dissipation (mW)429000
Typical Gate Charge @ 10V (nC)170
Typical Gate Charge @ Vgs (nC)170@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)45
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)80
Maximum Gate Threshold Voltage (V)4
Typical Gate Threshold Voltage (V)10
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)300
Typical Input Capacitance @ Vds (pF)13650@30V
Maximum Drain Source Resistance (mOhm)1.1@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Continuous Drain Current on PCB @ TC=25°C (A)300
Description
FDBL0110N60 ON Semiconductor Transistors MOSFETs N-CH Si 60V 300A 9-Pin(8+Tab) TO-LL T/R Si - Arrow.com
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