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MOSFETs SQJ402EP-T1_GE3
Vishay
SQJ402EP-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | Yes |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Triple Source |
| Package Width | 4.37 |
| Package Height | 1.07 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 10 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 2 |
| Minimum Gate Resistance (Ohm) | 0.65 |
| Maximum Power Dissipation (mW) | 83000 |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 2.7 |
| Typical Turn-Off Delay Time (ns) | 27 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.77 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 32 |
| Typical Input Capacitance @ Vds (pF) | 1829@25V |
| Maximum Drain Source Resistance (mOhm) | 11@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 75 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 65 |
| Description |
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