PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 6 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 6 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 1.5 |
Package Height | 0.85 |
Package Length | 2.95 |
Product Category | Power MOSFET |
Supplier Package | TSOT-23 |
Maximum IDSS (uA) | 1 |
Process Technology | DMOS |
Standard Package Name | SOT |
Typical Fall Time (ns) | 3.2 |
Typical Rise Time (ns) | 4.5 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 900 |
Typical Gate Charge @ Vgs (nC) | 0.49@4.5V |
Maximum Gate Source Voltage (V) | 8 |
Typical Output Capacitance (pF) | 6 |
Typical Turn-On Delay Time (ns) | 5 |
Maximum Drain Source Voltage (V) | 25 |
Typical Gate Plateau Voltage (V) | 2.1 |
Typical Turn-Off Delay Time (ns) | 4 |
Typical Gate to Drain Charge (nC) | 0.07 |
Maximum Gate Threshold Voltage (V) | 1.5 |
Minimum Gate Threshold Voltage (V) | 0.65 |
Typical Gate Threshold Voltage (V) | 0.85 |
Typical Gate to Source Charge (nC) | 0.22 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 0.22 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 9.5@10V |
Maximum Drain Source Resistance (mOhm) | 4000@4.5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 8 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 0.5 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.9 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 1.3@10V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 180 |
Description | |