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FDC6301N
FDC6301N
MOSFETs FDC6301N
onsemi
FDC6301N
--
Diodes, Transistors and Thyristors
MOSFETs
FDC6301N.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.5
Package Height0.85
Package Length2.95
Product CategoryPower MOSFET
Supplier PackageTSOT-23
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameSOT
Typical Fall Time (ns)3.2
Typical Rise Time (ns)4.5
Number of Elements per Chip2
Maximum Power Dissipation (mW)900
Typical Gate Charge @ Vgs (nC)0.49@4.5V
Maximum Gate Source Voltage (V)8
Typical Output Capacitance (pF)6
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)25
Typical Gate Plateau Voltage (V)2.1
Typical Turn-Off Delay Time (ns)4
Typical Gate to Drain Charge (nC)0.07
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.65
Typical Gate Threshold Voltage (V)0.85
Typical Gate to Source Charge (nC)0.22
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.22
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)9.5@10V
Maximum Drain Source Resistance (mOhm)4000@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)0.5
Maximum Power Dissipation on PCB @ TC=25°C (W)0.9
Typical Reverse Transfer Capacitance @ Vds (pF)1.3@10V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)180
Description
Trans MOSFET N-CH 25V 0.22A 6-Pin TSOT-23 T/R
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