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Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 0.85 |
| Package Length | 2.9 |
| Product Category | Power MOSFET |
| Supplier Package | TSOT-23 |
| Maximum IDSS (uA) | 1 |
| Process Technology | PowerTrench |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 3@P Channel|3@N Channel |
| Typical Rise Time (ns) | 14@P Channel|9@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 960 |
| Typical Gate Charge @ Vgs (nC) | 2.85@4.5V@P Channel|3.25@4.5V@N Channel |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 65@P Channel|75@N Channel |
| Typical Turn-On Delay Time (ns) | 7@P Channel|5@N Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.9@P Channel|1.7@N Channel |
| Typical Turn-Off Delay Time (ns) | 14@P Channel|12@N Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.79@P Channel|0.76@N Channel |
| Typical Gate to Drain Charge (nC) | 0.65@P Channel|0.9@N Channel |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate Threshold Voltage (V) | 0.9 |
| Typical Gate to Source Charge (nC) | 0.68@P Channel|0.65@N Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.9@P Channel|2.7@N Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 315@10V@P Channel|325@10V@N Channel |
| Maximum Drain Source Resistance (mOhm) | 170@4.5V@P Channel|80@4.5V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 8 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.96 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 24@10V@P Channel|35@10V@N Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1.9@P Channel|2.7@N Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 180 |
| Description |
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