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FDD3510H
FDD3510H
MOSFETs FDD3510H
onsemi
FDD3510H
--
Diodes, Transistors and Thyristors
MOSFETs
FDD3510H.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeGull-wing
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Common Drain Dual Source
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2@Q 1|5@Q 2
Typical Rise Time (ns)2@Q 1|3@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ 10V (nC)13@Q 1|14@Q 2
Typical Gate Charge @ Vgs (nC)13@10V@Q 1|14@10V@Q 2
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7@Q 1|6@Q 2
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)16@Q 1|25@Q 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.3@Q 1|2.8@Q 2
Typical Input Capacitance @ Vds (pF)600@40V@Q 1|660@40V@Q 2
Maximum Drain Source Resistance (mOhm)80@10V@Q 1|190@10V@Q 2
Description
Trans MOSFET N/P-CH 80V 4.3A/2.8A 5-Pin(4+Tab) DPAK T/R
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