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IRF7606TRPBF
IRF7606TRPBF
MOSFETs IRF7606TRPBF
Infineon
IRF7606TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7606TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3
Package Height0.86
Package Length3
Product CategoryPower MOSFET
Supplier PackageMicro
Process TechnologyHEXFET
Typical Fall Time (ns)39
Typical Rise Time (ns)20
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ 10V (nC)20
Typical Gate Charge @ Vgs (nC)20@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)300
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)43
Typical Gate to Drain Charge (nC)7.6
Maximum Gate Threshold Voltage (V)1(Min)
Typical Gate to Source Charge (nC)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.6
Typical Input Capacitance @ Vds (pF)520@25V
Typical Reverse Recovery Charge (nC)50
Maximum Drain Source Resistance (mOhm)90@10V
Description
Trans MOSFET P-CH Si 30V 3.6A 8-Pin Micro T/R
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