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FDD8770
FDD8770
MOSFETs FDD8770
onsemi
FDD8770
--
Diodes, Transistors and Thyristors
MOSFETs
FDD8770.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)25
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)115000
Typical Gate Charge @ 10V (nC)52
Typical Gate Charge @ Vgs (nC)29@5V|52@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)685
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)25
Typical Gate Plateau Voltage (V)2.8
Typical Turn-Off Delay Time (ns)49
Maximum Diode Forward Voltage (V)1.25
Typical Diode Forward Voltage (V)0.84
Typical Gate to Drain Charge (nC)11
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1.2
Typical Gate Threshold Voltage (V)1.6
Typical Gate to Source Charge (nC)8.1
Typical Reverse Recovery Time (ns)32
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)2795@13V
Typical Reverse Recovery Charge (nC)25
Maximum Drain Source Resistance (mOhm)4@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)407
Typical Reverse Transfer Capacitance @ Vds (pF)450@13V
Description
Trans MOSFET N-CH 25V 35A 3-Pin(2+Tab) DPAK T/R
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