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FDG6302P
FDG6302P
MOSFETs FDG6302P
onsemi
FDG6302P
--
Diodes, Transistors and Thyristors
MOSFETs
FDG6302P.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Process TechnologyDMOS
Standard Package NameSOT
Typical Fall Time (ns)5
Typical Rise Time (ns)8
Number of Elements per Chip2
Maximum Power Dissipation (mW)300
Typical Gate Charge @ Vgs (nC)0.22@4.5V
Maximum Gate Source Voltage (V)-8
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.14
Typical Input Capacitance @ Vds (pF)12@10V
Maximum Drain Source Resistance (mOhm)10000@4.5V
Description
Trans MOSFET P-CH 25V 0.14A 6-Pin SC-70 T/R
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