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MOSFETs SIR892DP-T1-GE3
Vishay
SIR892DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.89 |
| Package Height | 1.07(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 18 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 1.4 |
| Minimum Gate Resistance (Ohm) | 0.15 |
| Maximum Power Dissipation (mW) | 5000 |
| Typical Gate Charge @ 10V (nC) | 40 |
| Typical Gate Charge @ Vgs (nC) | 20@4.5V|40@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Gate Plateau Voltage (V) | 2.5 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.73 |
| Maximum Gate Threshold Voltage (V) | 2.6 |
| Typical Reverse Recovery Time (ns) | 27 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 2645@10V |
| Maximum Drain Source Resistance (MOhm) | 3.2@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 5 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 30 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 70 |
| Description |
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