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FDH44N50
FDH44N50
MOSFETs FDH44N50
onsemi
FDH44N50
--
Diodes, Transistors and Thyristors
MOSFETs
FDH44N50.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7
Package Height20.57
Package Length15.62
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)25
Process TechnologyUniFET
Standard Package NameTO-247
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)79
Typical Rise Time (ns)84
Number of Elements per Chip1
Maximum Power Dissipation (mW)750000
Typical Gate Charge @ 10V (nC)90
Typical Gate Charge @ Vgs (nC)90@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)645
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)500
Typical Gate Plateau Voltage (V)5
Typical Turn-Off Delay Time (ns)45
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)31
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)3.15
Typical Gate to Source Charge (nC)24
Typical Reverse Recovery Time (ns)920
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)44
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)5335@25V
Typical Reverse Recovery Charge (nC)14000
Maximum Drain Source Resistance (mOhm)120@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)176
Typical Reverse Transfer Capacitance @ Vds (pF)40@25V
Description
Trans MOSFET N-CH 500V 44A 3-Pin(3+Tab) TO-247 Tube
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