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FDI33N25TU
FDI33N25TU
MOSFETs FDI33N25TU
onsemi
FDI33N25TU
--
Diodes, Transistors and Thyristors
MOSFETs
FDI33N25TU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height9.2
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageI2PAK
Standard Package NameTO-262
Typical Fall Time (ns)120
Typical Rise Time (ns)230
Number of Elements per Chip1
Maximum Power Dissipation (mW)235000
Typical Gate Charge @ 10V (nC)36.8
Typical Gate Charge @ Vgs (nC)36.8@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33
Typical Input Capacitance @ Vds (pF)1640@25V
Maximum Drain Source Resistance (mOhm)94@10V
Description
Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) I2PAK Rail
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